目錄:四川梓冠光電科技有限公司>>硅基芯片>>芯片>> ZG高速SOI芯片光電探測器陣列
SOI芯片光電探測器陣列
SOI Chip-based Photodetector Array
SOI芯片式光電探測器陣列，該產品基于硅基鍺-硅光電探測器，實現了多通道光電探測器的單片化集成，可片上集成光學混頻器，芯片尺寸小，集成度高，偏振相關性小，模擬帶寬大，可提供裸片或光電一體化封裝產品方案。
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
〖性能指標Specifications〗
參數指標 Parameters
| 單位 Unit | 最小值 Min. | 典型值 Typ.
| 最大值 Max. | 備注 Notes |
波長范圍 Wavelength range | nm | 1530—1570 nm or 1270nm—1330 nm
| |||
暗電流 Dark current
| nA | 35 | 50 | ||
3 dB模擬帶寬 3 dB bandwidth | GHz | 28 | |||
光飽和功率 Optical saturation power | mW | 10 | |||
響應度 Responsibility | A/W | 0.8 | 0.85 | ||
90度光學混頻器損耗 90°mixer loss | dB | 6 | 6.5 | 6.7 | |
90度光學混頻器相位失衡度 90°mixer phase unbalance | ° | 5 | |||
通道數 Number of channels | 8或可定制 8 or Can be customized | ||||
光纖接入損耗 Insertion loss | dB | ≤0.5 | |||
偏振相關損耗 PDL | dB | ≤0.3 | |||
工作溫度范圍 Operating temperature range | °C | -20 | 50 | ||
工作濕度范圍 Operating humidity range | % | +65 | |||
芯片尺寸 Chip Dimensions | mm | 4(L)×5(W)×0.5(H) | |||
高速SOI芯片光電探測器陣列
高速SOI芯片光電探測器陣列
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