NB5000 聚焦離子束 電子束裝置
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- 公司名稱 日立科學(xué)儀器有限公司
- 品牌
- 型號(hào) NB5000
- 產(chǎn)地
- 廠商性質(zhì) 生產(chǎn)廠家
- 更新時(shí)間 2017/8/15 14:36:10
- 訪問(wèn)次數(shù) 1823
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聚焦離子束 電子束裝置NB5000 Features |
Ultra-high performance FIB
- Low CsFIB optics（*2） deliver 50nA or more of beam current （@40kV） in an about 1µm spot-size. The high current enables unconventional large-area milling, hard material fabrication and high throughput multiple specimen preparation.
New Micro-sampling
- Hitachi's patented Micro-sampling technology provides smooth probe motion. Also, the probe can be used for newly developed absorbed current imaging（*1） to aid fault isolation.
High precision end-point detection
- High resolution SEM allows high precision end-point detection. Section-view function, which displays an outline of the cross-section utilizing the real-time FIB image, is ideal for preparing electron irradiation sensitive specimens like low-K material.
High resolution SEM
- Hitachi's unparalleled SEM column and detector design（*2） enables high resolution SEM imaging during and after FIB fabrication.
Holder compatibility with TEM/STEM（*1）（*2）
- A side entry STEM/TEM-type staqe（*1） allows the use of the same specimen holder （compatible with NB5000 and Hitachi TEM/STEM）. No tweezer handling of specimen during transfer results in higher throughput TEM/STEM analysis.
（*1）:Optional accessory
（*2）:Hitachi patent
Low Cs FIB optics: patent pending, Micro-sampling: JP2774884/US5270552, Section-view function: patent pending, SEM column and detector design: JP3081393/US5387793, Holder compatibility: JP2842083
聚焦離子束 電子束裝置NB5000 Specifications
| FIB | Accelerating voltage | 1 - 40kV | |
| Beam current | 50 nA or more @ 40kV （CP） | ||
| SIM resolution | 5nm @ 40kV （CP） | ||
| Magnification | ×60 - ×250,000 | ||
| Ion source | Ga Liquid Metal Ion Source | ||
| Lens system | Low Cs 2-stage electrostatic lens system | ||
| SEM | Accelerating voltage | 0.5 - 30kV | |
| SEM resolution | 1.0nm @ 15kV （CP） | ||
| Magnification | High Mag mode | ×250 - ×800,000 | |
| Low Mag mode | ×70 - ×2,000 | ||
| Electron source | ZrO/W Schottky emission | ||
| Lens system | 3-stage electromagnetic lens reduction system | ||
| Signal selection | SEM | Upper SE, Lower SE, Absorbed current（*1） | |
| FIB | Lower SE, Absorbed current（*1） | ||
| Eucentric stage | Traverse range | X: 50mm （30mm（*2））, Y: 50mm （30mm（*2））, Z: 22mm | |
| T: -1.5 - 58.3°, R: 360° | |||
| Sample size | Maximum diameter | Φ50mm （Φ30mm（*2）） | |
| Deposition | Material | Tungsten/Carbon （changeable） | |
| Micro-sampling | Probe exchange | Load lock type | |
| Additional function | Touch sensing, Absorbed current imaging（*1） | ||
CP:Beam Cross Point
（*1）:Optional accessory
（*2）:When side entry stage is ordered
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